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221M16 SM145G0 SIEMENS 1N4006ID B4110 221M16 90160 EMK41H
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 2SB1198K
PNP Silicon Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
A L
3 Top View
General Purpose Transistor
SC-59 Dim A B C D
D
Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25
Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00
S
FEATURES
2
B
1
G H
C J K
G
Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150
J K L S
H
3 2 1
All Dimension in mm
COLLECTOR
3 2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test
unless otherwise specified
conditions MIN TYP MAX UNIT V V V
Ic=-50 A,IE=0 Ic=-2mA,IB=0 IE=-50 A,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-100mA IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA VCB=-10V,IE=0,f=1MHz
-80 -80 -5 -0.5 -0.5 120 390 -0.5 180 11
A A
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Q 120-270 R 180-390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SB1198K
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Electrical characteristic curves
01-Jun-2002 Rev. A
Page 2 of 2


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